Over the last ten years, GaN and ZnO nanowires have emerged as potential building blocks for the next generation of optoelectronic devices including LEDs, lasers, UV photodetectors and solar cells. This has led to an increasing number of publications in the field, which now outnumbers 10,000. In view of this wealth of information, this two-volume […]
Over the last ten years, GaN and ZnO nanowires have emerged as potential building blocks for the next generation of optoelectronic devices including LEDs, lasers, UV photodetectors and solar cells. This has led to an increasing number of publications in the field, which now outnumbers 10,000. In view of this wealth of information, this two-volume series is intended to give a detailed status of the research topic dedicated to GaN and ZnO nanowires. In particular, dealing with these two different but closely related semiconductors yields valuable comparisons and benefits the general understanding of this subject, helping promote the development of related optoelectronic applications.
The comprehensive books gather review articles written by pioneering and world-leading scientists at the forefront of basic and applied research, covering all aspects from low-dimensionality effects to optoelectronic devices through to nanowire growth and their related heterostructures.
This second volume is devoted to the formation and characterization of heterostructures made from GaN and ZnO nanowires. It also addresses the advanced fabrication of optoelectronic devices such as LEDs, lasers, UV photodetectors, and solar cells, on the basis of physical properties and growth processes presented in the first volume.
This book is of interest not only to physicists, chemists or materials scientists interested in the topic of one-dimensional nanostructures and their optoelectronic applications, but also to semiconductor scientists already in the field but looking for an extended overview.